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october 2011 doc id 16929 rev 3 1/18 18 std10nm50n STF10NM50N, stp10nm50n n-channel 500 v, 0.53 ? , 7 a dpak, to-220fp, to-220 mdmesh? ii power mosfet features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description these devices are n-channel power mosfets developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram type v dss (@tjmax) r ds(on) max i d std10nm50n 550 v < 0.63 ? 7 a STF10NM50N stp10nm50n 1 2 3 to-220fp to-220 dpak 1 2 3 tab 1 3 tab !-v $4!" ' 3 table 1. device summary order codes marking packages packaging std10nm50n 10nm50n dpak tape and reel STF10NM50N to-220fp tu b e stp10nm50n to-220 www.st.com
contents std10nm50n, STF10NM50N, stp10nm50n 2/18 doc id 16929 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
std10nm50n, STF10NM50N, stp10nm50n electrical ratings doc id 16929 rev 3 3/18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit dpak, to-220 to-220fp v ds drain-source voltage 500 v v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 7 7 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 5 5 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 28 28 (1) a p tot total dissipation at t c = 25 c 70 25 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v dv/dt (3) 3. i sd 7 a, di/dt 400 a/s, v dd = 80% v (br)dss , v dspeak v (br)dss peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit dpak to-220 to-220fp r thj-case thermal resistance junction-case max 1.79 5 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance ju nction-pcb minimum footprint 50 c/w r thj-amb thermal resistance juncti on-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repeti tive or not-repetitive (pulse width limited by tj max) 2a e as single pulse avalanche energy (starting tj = 25 c, i d = i ar , v dd = 50 v) 143 mj
electrical characteristics std10nm50n, STF10NM50N, stp10nm50n 4/18 doc id 16929 rev 3 2 electrical characteristics (t case =25c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 500 v i dss zero gate voltage drain current (v gs = 0) v ds = 500 v v ds = 500 v, t c = 125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 0.1 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 3.5 a 0.53 0.63 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 450 38 1.3 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v ds . equivalent output catacitance v gs = 0, v ds = 0 to 400 v - 167 - pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v, i d = 7 a, v gs = 10 v, (see figure 18) - 17 3.3 8.5 - nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level=20 mv open drain -4.7 - ?
std10nm50n, STF10NM50N, stp10nm50n electrical characteristics doc id 16929 rev 3 5/18 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 250 v, i d = 3.5 a r g =4.7 ? v gs = 10 v (see figure 17) - 7.8 4.4 7.8 12 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 7 28 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 7 a, v gs = 0 - 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7 a, di/dt = 100 a/s v dd = 60 v (see figure 22) - 177 1.4 16 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 22) - 216 1.7 15.4 ns c a
electrical characteristics std10nm50n, STF10NM50N, stp10nm50n 6/18 doc id 16929 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak figure 3. thermal impedance for dpak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-220 figure 7. thermal impedance for to-220 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am0 8 150v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am0 8 151v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am0 8 149v1
std10nm50n, STF10NM50N, stp10nm50n electrical characteristics doc id 16929 rev 3 7/18 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 6 4 2 0 0 10 v d s (v) 20 (a) 5 15 25 8 10 5v 6v v g s =10v 3 0 12 am0 8 152v1 i d 6 4 2 0 0 4 v g s (v) 8 (a) 2 6 10 8 10 12 v d s =20v am0 8 15 3 v1 v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =400v i d =7a 25 12 3 00 200 100 0 400 v d s 50 150 250 3 50 450 am0 8 154v1 r d s (on) 0.5 3 0.52 0.51 0.50 0 4 i d (a) ( ? ) 2 6 0.54 0.55 v g s =10v am0 8 155v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am0 8 156v1 e o ss 6 4 2 0 0 100 v d s (v) ( j) 400 8 200 3 00 10 12 500 600 14 16 am0 8 157v1
electrical characteristics std10nm50n, STF10NM50N, stp10nm50n 8/18 doc id 16929 rev 3 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. normalized b vdss vs temperature v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250 a am0 8 15 8 v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 2.1 0.7 1.1 1.5 1.9 i d = 3 .5 a am0 8 159v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.02 1.04 1.06 i d =1ma 1.0 8 1.10 am0902 8 v1
std10nm50n, STF10NM50N, stp10nm50n test circuits doc id 16929 rev 3 9/18 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive wavefor m figure 22. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data std10nm50n, STF10NM50N, stp10nm50n 10/18 doc id 16929 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. dpak (to-252) mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h9.35 10.10 l 1 1.50 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
std10nm50n, STF10NM50N, stp10nm50n package mechanical data doc id 16929 rev 3 11/18 figure 23. dpak (to-252) drawing figure 24. dpak footprint (a) a. all dimension ar e in millimeters 006 8 772_h 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
package mechanical data std10nm50n, STF10NM50N, stp10nm50n 12/18 doc id 16929 rev 3 figure 25. to-220fp drawing table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
std10nm50n, STF10NM50N, stp10nm50n package mechanical data doc id 16929 rev 3 13/18 table 11. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
package mechanical data std10nm50n, STF10NM50N, stp10nm50n 14/18 doc id 16929 rev 3 figure 26. to-220 type a drawing 00159 88 _typea_rev_ s
std10nm50n, STF10NM50N, stp10nm50n packaging mechanical data doc id 16929 rev 3 15/18 5 packaging mechanical data table 12. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d1.5 1.6d20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
packaging mechanical data std10nm50n, STF10NM50N, stp10nm50n 16/18 doc id 16929 rev 3 figure 27. tape for dpak (to-252) figure 28. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
std10nm50n, STF10NM50N, stp10nm50n revision history doc id 16929 rev 3 17/18 6 revision history table 13. document revision history date revision changes 16-dec-2009 1 first release. 08-sep-2010 2 document status promoted from preliminary data to datasheet. 26-oct-2011 3 updated v dss (@tjmax) in cover page. updated section 4: package mechanical data and section 5: packaging mechanical data . minor text changes.
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